NAND型フラッシュメモリのチップサイズ動向

Abstract

NAND flash memories have historically doubled densities every year with each new technology generation. This trend has been referred to "Hwang' s Law", named after Hwang Chang-gyu, former President of Samsung Semiconductor who first coined the term. As NAND flash memory encounters scaling challenges, it is becoming increasingly difficult to maintain Hwang' s Law as chip sizes increase beyond 200mm2. SLC (Single-Level-Cell) and MLC (Multi-Level-Cell) or 2-bit per cell technologies are the current mainstream technologies. NAND flash manufacturers are adopting 3-bit per cell and 4-bit per cell technologies to reduce chip sizes and correspondingly, costs. Three-bit per cell and 4-bit per cell NAND flash memory technologies are expected to garner the majority of the market in four years. NAND Flash Memory Chip Size Trend provides actual and estimated NAND flash memory chip sizes and roadmaps for SLC, MLC, 3-bit per cell and 4-bit per cell technologies by density, process technology generation and vendor. The report covers NAND flash memory product densities from 512Mb to 64Gb for Intel-Micron Flash Technologies, Numonyx/Hynix, Samsung and SanDisk/Toshiba.

Table of Contents

• CONTENTS
• LIST OF FIGURES
• LIST OF TABLES
• TERMINOLOGY
• CHIP SIZE TREND
• VENDORS
  • Intel-Micron Flash Technologies
  • Numonyx/Hynix
  • Samsung
  • SanDisk/Toshiba
• PRODUCT ROADMAPS
  • 512Mb
  • 1Gb
  • 2Gb
  • 4Gb
  • 8Gb
  • 16Gb
  • 32Gb
  • 64Gb
• ABOUT THE AUTHOR
• ABOUT FORWARD INSIGHTS
  • Services
  • Contact

List of Figures

• Figure 1. Chip Size Trend
• Figure 2. Cell Efficiency Trend
• Figure 3. 512Mb Die Shrink Roadmap
• Figure 4. 1Gb Die Shrink Roadmap
• Figure 5. 2Gb Die Shrink Roadmap
• Figure 6. 4Gb Die Shrink Roadmap
• Figure 7. 8Gb Die Shrink Roadmap
• Figure 8. 16Gb Die Shrink Roadmap
• Figure 9. 32Gb Die Shrink Roadmap
• Figure 10. 64Gb Die Shrink Roadmap