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【 英文市場調査報告書 】

窒化ガリウム基板を用いた機器:性能比較と市場評価

Substrates for GaN Based Devices: Performance Comparisons and Market Assessment

商品コード : 44675 Strategies Unlimited
出版日 : 2006/09
発行 : Strategies Unlimited
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概要 原文目次
※この商品は英文にてご提供いたします。

Abstract

About Strategies Unlimited

Strategies Unlimited provides market research and strategic consulting services for the optical networks, optoelectronics, and compound semiconductor industries. The company has delivered forecasts, analyses, and recommendations to suppliers and purchasers since 1979.

The company has a solid reputation for its ability to understand and explain the technical, economic, and competitive issues that influence supply and demand in rapidly changing markets.

In 2001, Strategies Unlimited joined PennWell Corporation as a research unit of the Advanced Technology Division.

Other Reports and Services from Strategies Unlimited

High-Brightness LEDs Market Update and Forecast June 2006

This report provides quantitative data and in-depth analysis on the demand side of the high-brightness LED market. The data is sorted by application and material type. A market forecast through 2010 is provided, including revenue, units and ASPs.

7th Annual Strategies in Light Conference February 12-14, 2007

Now in its 8th year, the annual executive-level conference on the high-brightness LED industry is considered to be the premier forum for addressing commercial developments in the high-brightness LED market. This conference is designed to give technology, and business leaders insight into the rapidly growing international markets and applications for high-brightness LEDs.

High-Brightness LED Global Supplier Analysis November 2005

This report will profile the suppliers (packagers, epi, and chip producers) of high-brightness LEDs worldwide. Information includes capacity estimates, product characteristics, and company profiles including revenue and market shares.

Table of Contents

1. EXECUTIVE SUMMARY

  • 1.1 Introduction
  • 1.2 Technology Summary
    • 1.2.1 Selected Technical Issues
      • 1.2.1.1 Substrate Types and Characteristics (Sapphire, SiC, GaN, AlN, Si)
      • 1.2.1.2 Crystal Growth Techniques
      • 1.2.1.3 Deposited Substrate Growth
  • 1.3 Major Applications/Device Types
  • 1.4 Major Players (Commercial Suppliers, Research Centers, Universities, and Government Agencies)
  • 1.5 Sales/Market Forecasts
    • 1.5.1 Substrates
    • 1.5.2 Optoelectronic Devices (LEDs, LDs)
    • 1.5.3 Electronic Devices (RF/Microwave, Power Switch, High-Voltage Rectifier, High-Temperature)
  • 1.6 The Report
  • 1.7 Bibliography

2. TECHNOLOGY SUMMARY

  • 2.1 Basic Substrate Materials Properties
    • 2.1.1 Crystal Structure
    • 2.1.2 Bandgap
    • 2.1.3 Electron Saturated Drift Velocity
    • 2.1.4 Breakdown Electric Field
    • 2.1.5 Dielectric Constant
    • 2.1.6 Thermal Conductivity
    • 2.1.7 Coefficient of Thermal Expansion (CTE)
    • 2.1.8 Lattice Match with Deposited Films
  • 2.2 Substrate Formation
    • 2.2.1 Bulk
    • 2.2.2 Deposited (Heterodeposition)
  • 2.3 Suitability of Substrates
    • 2.3.1 Quality
    • 2.3.2 Price
    • 2.3.3 Availability
    • 2.3.4 Uniformity
    • 2.3.5 Compatibility with Active Layers
    • 2.3.6 Device Yield
    • 2.3.7 End Product Performance/Application
    • 2.3.8 End Product Reliability/Lifetime
    • 2.3.9 Figures of Merit/Device Performance

3. MAJOR APPLICATIONS/DEVICE TYPES

4. DIRECTORY OF COMPANIES/RESEARCH CENTERS/UNIVERSITIES/ GOVERNMENT AGENCIES ACTIVE IN SUBSTRATE PRODUCTION AND DEVELOPMENT

  • 4.1 Companies
    • 4.1.1 North America
      • 4.1.1.1 U.S.
      • 4.1.1.2 Canada
    • 4.1.2 Asia
      • 4.1.2.1 Japan
      • 4.1.2.2 South Korea
      • 4.1.2.3 Taiwan
    • 4.1.3 Europe
      • 4.1.3.1 Finland
      • 4.1.3.2 France
      • 4.1.3.3 Germany
      • 4.1.3.4 Poland
      • 4.1.3.5 Russia
  • 4.2 Universities/Research Centers Active in Compound Semiconductor Substrate Development
    • 4.2.1 North America
      • 4.2.1.1 U.S.
      • 4.2.1.2 Canada
    • 4.2.2 Asia/Pacific
      • 4.2.2.1 Japan
      • 4.2.2.2 People' s Republic of China
      • 4.2.2.3 Singapore
      • 4.2.2.4 South Korea
      • 4.2.2.5 Taiwan
    • 4.2.3 Europe
      • 4.2.3.1 Belarus
      • 4.2.3.2 Belgium
      • 4.2.3.3 Finland
      • 4.2.3.4 France
      • 4.2.3.5 Germany
      • 4.2.3.6 Greece
      • 4.2.3.7 Hungary
      • 4.2.3.8 Italy
      • 4.2.3.9 Lithuania
      • 4.2.3.10 Poland
      • 4.2.3.11 Russia
      • 4.2.3.12 Sweden
      • 4.2.3.13 Switzerland
      • 4.2.3.14 UK
  • 4.3 Government Agencies Active in Supporting Compound Semiconductor Substrate Development
    • 4.3.1 North America
      • 4.3.1.1 U.S.
      • 4.3.1.2 Canada
    • 4.3.2 Asia
      • 4.3.2.1 Japan
      • 4.3.2.2 People' s Republic of China
      • 4.3.2.3 South Korea
      • 4.3.2.4 Taiwan
    • 4.3.3 Europe
      • 4.3.3.1 France
      • 4.3.3.2 Germany
      • 4.3.3.3 Lithuania
      • 4.3.3.4 Poland
      • 4.3.3.5 Russia
      • 4.3.3.6 Sweden
      • 4.3.3.7 Switzerland
  • 4.4 Mini-Profiles of Representative Companies, Research Centers, Universities, and Government Agencies Supplying Substrates or Active in Their Development
    • 4.4.1 U.S.
    • 4.4.2 Canada
    • 4.4.3 France
    • 4.4.4 Japan
    • 4.4.5 Poland
    • 4.4.6 South Korea

5. SUBSTRATE MARKETS AND MARKET FORECASTS

  • 5.1 Sapphire
  • 5.2 SiC
  • 5.3 GaN
  • 5.4 AlN
  • 5.5 Si (For GaN and AlN Active Layers)

6. THE REPORT (SUMMARY)

7. BIBLIOGRAPHY (Representative Technical Papers Dealing with Sapphire, SiC, GaN, AlN, and Si Issues from 2004-2006

概要 原文目次
※この商品は英文にてご提供いたします。
【 英文市場調査報告書 】
窒化ガリウム基板を用いた機器:性能比較と市場評価
Substrates for GaN Based Devices: Performance Comparisons and Market Assessment
出版日 : 2006/09
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商品コード : 44675
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