パワーエレクトロニクス市場向けSiCデバイスの現状と予測:2006年

Abstract

Recent developments in SiC MOSFETs and other switches open the door of new coming applications. With the latest Rohm announcement of Ron = 3.1 mΩ.cm2, MOSFETs are coming out the labs strug-gling with best silicon trench-MOS currently available. It is now possible to envisage full-SiC power mod-ules. Others challengers on MOSFETs are Mitsubishi Electric, Denso, Philips, Semisouth, ...

This will go with the implementation of new SiC-based converters and inverters. SiC will allow a dramatic reduction in size and weight along with an improvement of power conversion. Electric motor drivers are the first seen applications in both the industry and the hybrid automotive fields. In 2016, 5 millions hybrid cars could benefit from SiC devices. First power-module prototypes are going out of R&D labs, as shown by Kansai Electric and Cree or MELCO. Solar and wind power players are starting to look at these compo-nents as well.

2005 has seen the involvement of new players in SiC power devices business like Rohm, Inter- national Rectifier, ST Microelectronics, and Philips in collaboration with Chalmers University.

Even if SiC Schottky diodes are offering sharp im-provements over silicon-based diodes, it deals with a complete re-design of the power supply. This leads to a slow market penetration, starting with high-end devices and now migrating to mid-end appli-cations. We forecast the devices market will reach about $50M by 2010 for the Schottky business. The target price for such a component is expected to decrease down to 0.2$/Amp but the current level is still laying at ~0.45$/Amp. We forecast PFC will handle a ~$100M SiC devices market in 2012.

We expect that PFC manufacturers will then jump massively on this technique, marketing new SiC-based products. We set this high CAGR curve to start by 2009 targeting a total accessible market of 1.2 billion PFC units in 2006.

Apart from regular silicon diodes, few competing SiC materials exist today for these applications. However a GaN-based Schottky diode has been recently intro-duced. The learning curve for this product has to be kept into investigation but we are confident with SiC monopoly for the next 3-5 years.

The introduction of 4" wafers will help to reach this target, allowing the use of regular semiconductor capi-tal equipment. 2007 should see the introduction of 4" SiC at production level. Coupled with the reduction of micropipes density, now close to 0, both parameters will impact positively the productivity of such a compo-nent.

Table of Contents

Executive summary

A vision of Power Devices market in 2015...

Emerging technologies roadmap for Power Devices production:

SiC as a key trend for future power electronics

Global Power Devices Market

• Definition
• List of considered devices
• Main applications of power devices
• Silicon Power Devices Capabilities
• Positioning of the SiC components in power electronics
• Power Devices Technical Challenges
• Most targeted applications by devices type
• Power devices market forecast in M$
• 2003-2009: The global power devices market:
  • IPM will represent more than 50% by 2008
• Comparison with mainstream SC market:
  • in 2005, Power Devices is accounting for ~10%
• Focus on Discretes market:
  • 2003->2005: Power MOSFETs are pushing in
• Focus on IPM:
  • Voltage regulators are leading the market
• Ranking of power devices manufacturers 2004 ranking based on sales
• Power Devices over total IC revenues
• Power devices manufacturers: key data and involvement in SiC
• Fab geographical breakdown in Europe
• Fab geographical breakdown in NA & Mexico
• Fab geographical breakdown in Asia
• Fab location & wafers production for Power Devices: 2005 geographical breakdown
• Worldwide fab capacity per products type
  • Breakdown by regions
• Worldwide fab capacity per regions
  • Breakdown by products type
• 2003-2009 wafers consumption
  • (6" equ. wafers units)
• Wafers size breakdown
• Power Devices : from a material point of view...

SiC power electronics market

• SiC power electronic devices:
  • Market status: small but promising...
• Power electronics market segmentation
• SiC diodes and transistors
  • Main targeted applications and specs
• SiC Power electronics
  • Applications roadmap 2005-2009
• SiC-based applications roadmap
• Substrates roadmap: Power Devices
  • Material trends and substrates market forecasts
• Status of SiC-based devices
• Material / applications comparison matrix & evolution
• SiC component costs breakdown comparison
• Process cost per square units for different SiC components
• SiC power devices:
  • chips size and power density
• Power Factor Correctors market
  • SiC Schottky diodes (SBD) main market characteristics
  • SiC SBD main advantages in PFC circuits
  • SiC Schottky diodes 2005 market status
  • SiC Schottky diodes2005 market data
  • 2005 Schottky diodes production estimation
  • Roadmap for Schottky ASP 2002 - 2010
  • SiC Schottky diodes Devices specs roadmap (R&D)
  • SiC Schottky diodes Evolution of commercially available Amperage
  • 2003-2010 SiC Schottky diodes market forecasts in units and
  • Power Electronics: 2003-2010 SiC Schottky diodes wafers consumption in units
  • Power Electronics: Wafers market for SiC Schottky diodes
  • Potential SiC Schottky diodes users for PFC TOP 15 power supplies manufacturers
  • Product example: International Rectifier: 4H-SiC Schottky Diodes

SiC devices: Automotive applications

• Why SiC in cars ?
• Automotive Application: Current technologies in use
• Automotive Application: Hybrid Electrical Vehicle (HEV) requirements.
• Automotive Application: HEV: Expected results of SiC introduction:
• The TOP 5 key requirements for power transistors in HEV (according to Toyota)
• Roadmap for operation voltage in HEV
• Projection of market shares of EV, HEV & FCV over ICE to 2020
• Sales projection for EV, HEV & FCV to 2020 in million units
• Sales volume projection for SiC diodes and transistors in automotive applications
• Sales revenues projection for SiC diodes and transistors in automotive applications
• Industry involvement: Possible SiC devices buyers

Inverters for solar power

• Solar electricity generation: Photovoltaic principle
• Solar electricity generation
• Utilization of solar electricity
• Solar inverters segmentation
• Solar Market Estimation in MW
• Solar inverters estimation in M$
• Inverters key parameters
• Efficiency of solar cells
• Cost breakdown of a solar installation
• Evolution of price / watt for inverters
• Price or efficiency?
• Solar inverter nominal power
• Electrical features
• Diodes and switching
• SiC devices at 600V
• SiC devices at 1200 V
• Solar inverter manufacturers
• Conclusions

Power converters for wind turbines

• Annual installed capacity forecast
• Annual installed capacity geographical breakdown
• Wind turbine (WT) Architecture
• Wind power turbine generators and power converters
• Variable speed wind turbine inverters
• IGBT technology
• Industrial food chain
• Wind turbine manufacturers
• An example of realization: Cree / Kansai Electric 100 kVA SiC Inverter
• SiC based inverters developments
• Wind turbines market trends
• Market drivers for SiC
• Main players SiC awareness
• Conclusions

Others SiC devices on the run...

• SiC MOSFET Transistors
• MOSFET Transistors Companies involvement
• Silicon vs. Silicon Carbide MOSFET
• SiC MOSFET: state-of-the-art
• Example of product : Cree : 1.2kV, 50A, 8 mΩ.cm2 4H-SiC DMOSFET
• Example of product : Rohm : 900V; 7.15mΩcm2 Power MOSFET
• SiC Bipolar diodes (PiN)
• SiC PiN diodes: state-of-the-art
• Exemple of device: Cree 8.6 kV, 4H-SiC PiN Diode
• SiC JFET and BJT: state-of-the-art

Alternatives to SiC: GaN and diamond electronics

• Introduction
• Active layer thickness comparison
• Industrial initiatives in GaN or diamond power electronics
• Example of Diamond Schottky diode by Dynex Semiconductor (UK)
• Conclusions